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April 2001
Si3443DV
P-Channel 2.5V Specified PowerTrench ? MOSFET
General Description
Features
This P-Channel 2.5V specified MOSFET is produced
using Fairchild's advanced PowerTrench process that
has been especially tailored to minimize on-state
resistance and yet maintain low gate charge for
superior switching performance.
These devices have been designed to offer exceptional
power dissipation in a very small footprint for
applications where the larger packages are impractical.
Applications
? Load switch
? Battery protection
? Power management
?
?
?
?
?
-4 A, -20 V. R DS(ON) = 0.065 ? @ V GS = -4.5 V
R DS(ON) = 0.100 ? @ V GS = -2.5 V
Fast switching speed.
Low gate charge (7.2nC typical).
High performance trench technology for extremely
low R DS(ON) .
SuperSOT TM -6 package: small footprint (72% smaller
than standard SO-8); low profile (1mm thick).
D
S
1
6
D
2
5
SuperSOT -6
TM
D
D
G
3
4
Absolute Maximum Ratings
T A = 25°C unless otherwise noted
Symbol
V DSS
V GSS
Drain-Source Voltage
Gate-Source Voltage
Parameter
Ratings
-20
± 8
Units
V
V
I D
Drain Current
Drain Current
- Continuous
- Pulsed
(Note 1)
(Note 1a)
-4
-20
A
P D
Power Dissipation for Single Operation
(Note 1a)
1.6
W
(Note 1b)
0.8
T J , T stg
Operating and Storage Junction Temperature Range
-55 to +150
° C
Thermal Characteristics
R θ JA
R θ JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
78
30
° C/W
° C/W
Package Outlines and Ordering Information
Device Marking
.443
Device
Si3443DV
Reel Size
7’’
Tape Width
8mm
Quantity
3000 units
? 2001 Fairchild Semiconductor Corporation
Si3443DV, REV A
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相关代理商/技术参数
SI3443DV_NL 制造商:Fairchild Semiconductor Corporation 功能描述:
SI3443DV_Q 功能描述:MOSFET SSOT6 SINGLE PCH RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3443DV-NF073 制造商:Vishay Siliconix 功能描述:P-CH MOSFET TSOP-6 20V 65MOHM @ 4.5V - Rail/Tube
SI3443DVPBF 制造商:INTERFET 制造商全称:INTERFET 功能描述:HEXFET Power MOSFET
SI3443DV-T1 功能描述:MOSFET 20V 4.4A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3443DV-T1-E3 功能描述:MOSFET 20V 4.4A 2W RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3443DVTR 功能描述:MOSFET P-CH 20V 4.4A 6-TSOP RoHS:否 类别:分离式半导体产品 >> FET - 单 系列:HEXFET® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件
SI3443DV-TR 制造商:International Rectifier 功能描述: